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* Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of 6 in. lbs. (1) Proper strike and creepage distance must be provided.
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
For Isolated Package Applications
Complementary Power Darlingtons
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
Designed for general-purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.
* * * * * * *
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Lead Temperature for Soldering Purpose
Thermal Resistance, Junction to Case*
Thermal Resistance, Junction to Ambient
Operating and Storage Junction Temperature Range
Total Power Dissipation @ TA = 25_C Derate above 25_C
Total Power Dissipation* @ TC = 25_C Derate above 25_C
Base Current
Collector Current -- Continuous Peak
RMS Isolation Voltage (1) (for 1 sec, R.H. < 30%, TA = 25_C)
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Electrically Similar to the Popular TIP122 and TIP127 100 VCEO(sus) 5 A Rated Collector Current No Isolating Washers Required Reduced System Cost High DC Current Gain -- 2000 (Min) @ IC = 3 Adc UL Recognized, File #E69369, to 3500 VRMS Isolation
Characteristic
Rating
Test No. 1 Per Fig. 14 Test No. 2 Per Fig. 15 Test No. 3 Per Fig. 16
Symbol
Symbol
TJ, Tstg
VISOL
VCEO
RJC
RJA
VCB
VEB
PD
PD
TL
IC
IB
COMPLEMENTARY SILICON POWER DARLINGTONS 5 AMPERES 100 VOLTS 30 WATTS
MJF122 PNP MJF127
- 65 to + 150
CASE 221D-02 TO-220 TYPE
Value
2 0.016
Order this document by MF122/D
4500 3500 1500
62.5
Max
0.12
30 0.24
260
100
100
4.1
NPN
5 8
5
VRMS
Watts W/_C
Watts W/_C
_C/W
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
IC
1
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MJF122 MJF127
(1) Pulse Test: Pulse Width
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS (1)
OFF CHARACTERISTICS
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES, e.g., 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA
V1 APPROX. -12 V
t, TIME ( s)
V2 APPROX. +8 V
Collector-Emitter Saturation Voltage (IC = 3 Adc, IB = 12 mAdc) Collector-Emitter Saturation Voltage (IC = 5 Adc, IB = 20 mAdc)
DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc) DC Current Gain (IC = 3 Adc, VCE = 3 Vdc)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Small-Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)
Base-Emitter On Voltage (IC = 3 Adc, VCE = 3 Vdc)
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
Collector Cutoff Current (VCB = 100 Vdc, IE = 0)
Collector Cutoff Current (VCE = 50 Vdc, IB = 0)
Collector-Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0)
2
0 tr, tf 10 ns DUTY CYCLE = 1%
Figure 1. Switching Times Test Circuit
25 s
FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
v 300 s, Duty Cycle v 2%.
51
RB
D1
Characteristic
+4 V
8k
120
RC TUT
VCC - 30 V
SCOPE
0.1 0.07 0.05 0.1
0.3 0.2
1 0.7 0.5
2
5
3
MJF127 MJF122
VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C
Motorola Bipolar Power Transistor Device Data
0.2
Figure 2. Typical Switching Times
ts VCEO(sus) 3 0.5 0.7 1 2 0.3 IC, COLLECTOR CURRENT (AMP) VCE(sat) VBE(on) Symbol ICBO ICEO IEBO Cob hFE hfe PNP NPN 1000 2000 Min 100 -- -- -- -- -- -- -- -- tf 4 tr td @ VBE(off) = 0 V Max 300 200 2.5 2 3.5 10 10 -- -- -- -- 2 mAdc Adc Adc Unit Vdc Vdc Vdc pF -- -- 5 7 10
MJF122 MJF127
TA TC 4 80 PD, POWER DISSIPATION (WATTS)
3 60 TC 2 40
1 20
TA
0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (C)
Figure 3. Maximum Power Derating
1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 t, TIME (ms) 100 200 300 500 1K 2K 3K 5K 10K SINGLE PULSE RJC(t) = r(t) RJC TJ(pk) - TC = P(pk) RJC(t)
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 4. Thermal Response
10 IC, COLLECTOR CURRENT (AMPS) 5 3 2 1 0.5 0.3 0.2 0.1 CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) 1 10 5 20 30 2 3 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 150C dc 5 ms 1 ms
100 s
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.
100
Figure 5. Maximum Forward Bias Safe Operating Area
Motorola Bipolar Power Transistor Device Data
3
MJF122 MJF127
10,000 hfe , SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1 2 TC = 25C VCE = 4 Vdc IC = 3 Adc 300 TJ = 25C 200 C, CAPACITANCE (pF) Cob 100 70 50 PNP NPN 5 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 30 0.1 0.2 PNP NPN 2 10 20 0.5 1 5 VR, REVERSE VOLTAGE (VOLTS) 50 100 Cib
Figure 6. Typical Small-Signal Current Gain
Figure 7. Typical Capacitance
NPN MJF122
20,000 VCE = 4 V 10,000 hFE , DC CURRENT GAIN 5000 3000 2000 25C 1000 500 300 200 - 55C TJ = 150C 10,000 hFE , DC CURRENT GAIN 7000 5000 3000 2000 1000 700 500 300 200 0.1 25C TJ = 150C 20,000
PNP MJF127
VCE = 4 V
- 55C
0.1
0.2
0.3
0.5 0.7
1
2
3
5
7
10
0.2
0.3
0.5 0.7
1
2
3
5
7
10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 8. Typical DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3 TJ = 25C 2.6 IC = 2 A 2.2 4A 6A
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3 TJ = 25C 2.6 IC = 2 A 2.2 4A 6A
1.8
1.8
1.4
1.4 1 0.3
1 0.3
0.5 0.7
1
2
3
5
7
10
20
30
0.5 0.7
1
2
3
5
7
10
20
30
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 9. Typical Collector Saturation Region
4
Motorola Bipolar Power Transistor Device Data
MJF122 MJF127
NPN MJF122
3 TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 3 TJ = 25C
PNP MJF127
2 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4 V 1 0.5 0.1 VCE(sat) @ IC/IB = 250
2
1.5
1.5
VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250
1 0.5 VCE(sat) @ IC/IB = 250 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP)
0.2 0.3
0.5 0.7
1
2
3
5
7
10
IC, COLLECTOR CURRENT (AMP)
Figure 10. Typical "On" Voltages
+5 +4 +3 +2 +1 0 -1 -2 -3 -4 -5 0.1 25C to 150C VB FOR VBE 0.2 0.3 0.5 - 55C to 25C 0.7 1 2 3 5 7 10 *VC FOR VCE(sat) *IC/IB hFE 3 25C to 150C - 55C to 25C V, TEMPERATURE COEFFICIENTS (mV/C) V, TEMPERATURE COEFFICIENT (mVC)
+5 +4 +3 +2 +1 0 -1 -2 -3 -4 -5 0.1 VB FOR VBE - 55C to 25C 25C to 150C 5 7 10 *VC FOR VCE(sat) - 55C to 25C *IC/IB hFE 3 25C to 150C
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 1 23 IC, COLLECTOR CURRENT (AMP)
Figure 11. Typical Temperature Coefficients
105 REVERSE IC, COLLECTOR CURRENT ( A) 104 103 102 TJ = 150C 101 100 100C VCE = 30 V FORWARD IC, COLLECTOR CURRENT ( A)
105 REVERSE 104 103 102 101 100 25C 10-1 + 0.6 + 0.4 + 0.2 TJ = 150C 100C VCE = 30 V FORWARD
25C 10-1 - 0.6 - 0.4 - 0.2
0
+ 0.2
+ 0.4 + 0.6 + 0.8
+1
+ 1.2 + 1.4
0
- 0.2 - 0.4 - 0.6 - 0.8
-1
- 1.2 - 1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Typical Collector Cut-Off Region
Motorola Bipolar Power Transistor Device Data
5
MJF122 MJF127
NPN MJF122
COLLECTOR
PNP MJF127
COLLECTOR
BASE
BASE
8k
120
8k
120
EMITTER
EMITTER
Figure 13. Darlington Schematic
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE
CLIP
CLIP
0.107" MIN LEADS
0.107" MIN LEADS
HEATSINK 0.110" MIN
HEATSINK
HEATSINK
Figure 14. Clip Mounting Position for Isolation Test Number 1
Figure 15. Clip Mounting Position for Isolation Test Number 2
Figure 16. Screw Mounting Position for Isolation Test Number 3
* Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION
4-40 SCREW PLAIN WASHER CLIP
HEATSINK COMPRESSION WASHER NUT HEATSINK
Figure 17. Typical Mounting Techniques*
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040.
6
Motorola Bipolar Power Transistor Device Data
MJF122 MJF127
PACKAGE DIMENSIONS
-T- F Q A
123
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78
-B-
C S U
H K -Y-
G N L D
3 PL M
J R
0.25 (0.010)
B
M
Y
STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER
CASE 221D-02 TO-220 TYPE ISSUE D
Motorola Bipolar Power Transistor Device Data
7
MJF122 MJF127
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
8
Motorola Bipolar Power Transistor Device Data
*MJF122/D*
MJF122/D

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